The Interface Analysis Centre provides a wide range of techniques for the analysis of interfaces in solid-state materials. Our range of techniques can be separated into two areas of speciality: Near Surface Techniques and Surface Techniques.

Surface Techniques
Auger Electron Spectroscopy (AES) All elements, except H and He, can be detected in the top few atom layers. Semi-quantitative. Good spatial resolution. Instruments equipped with fracture stages (both impact and tensile), and depth profiling facilities.	Secondary Ion Mass Spectrometry (SIMS) Static SIMS: All elements detected, most to ppm detection levels. High mass numbers detected, good for analysis of polymers, with a spatial resolution of ~3 µm. Depth profiling is also possible.
X-ray Photoelectron Spectroscopy (XPS) Nearly all elements detected. Semi-quantitative with chemical state information. The ESCASCOPE has spatial resolution of 10 µm when mapping and 50 µm in analysis.	Focused Ion Beam (FIB) Milling and imaging tool for device editing, defect and failure analysis, TEM sample preparation, sample sectioning and microscopy is also possible
Near Surface Techniques
Scanning Electron Microscopy (SEM) with EDX analysis All elements except H and He can be detected in the top few atom layers. Semi-quantitative. Good spatial resolution. Instruments equipped with fracture stages (both impact and tensile), and depth profiling facilities. We also have an Environental SEM, for low vacuum analysis of wet, or larger environmental samples.	Laser Raman Spectroscopy (LRS) Used to identify materials by characterising the distinctive energies of the chemical bonds or to distinguish between different phases of the same material. We offer MicroRaman analysis and mapping of materials, as well as spot Raman analysis of large and in-situ components, e.g. alumina- and zirconia-based oxides on turbine surfaces.

These techniques are available to commercial, industrial, and academic institutions at highly competitive rates. Please contact us to discuss your requirements.